STP30N10F7 Datasheet - STMicroelectronics

STP30N10F7, N-CHANNEL POWER MOSFET

STP30N10F7 N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

Features

* Order code STP30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FOM )
* Low Crss /Ciss ratio for EMI immunity

STP30N10F7-STMicroelectronics.pdf