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STP30N10F7
N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code STP30N10F7
VDS 100 V
RDS(on) max. 0.024 Ω
ID 32 A
PTOT 50 W
Among the lowest RDS(on) on the market Excellent figure of merit (FOM ) Low Crss /Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STP30N10F7 Datasheet
