W25NM60N Datasheet (STMicroelectronics)

W25NM60N, STW25NM60N

du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology.

This P t(srevolutionary MOSFET associates a new vertical te cstructure to the company’s strip layout to yield one le uof the world’s lowest on-resistance and gate dcharge.

It is therefore suitable for the

W25NM60N Features

* Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum temperature allowed te c

* 100% avalanche tes