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ELM5964-10F

C-Band Internally Matched FET

ELM5964-10F Features

* High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=10.0dB(Typ.) High PAE: hadd=39%(Typ.) Broad Band: 5.9～6.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package DESCRIPTION The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optim

ELM5964-10F General Description

The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channe.

ELM5964-10F Datasheet (356.88 KB)

Preview of ELM5964-10F PDF

Datasheet Details

Part number:

ELM5964-10F

Manufacturer:

SUMITOMO

File Size:

356.88 KB

Description:

C-band internally matched fet.

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TAGS

ELM5964-10F C-Band Internally Matched FET SUMITOMO

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