FLM6472-12F
SUMITOMO
278.10kb
C-band internally matched fet. The FLM6472-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in
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FLM6472-12F - C-Band Internally Matched FET
(ETC)
FLM6472-12F
FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB.
FLM6472-18F - C-Band Internally Matched FET
(SUMITOMO)
FLM6472-18F
FEATURES
• • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB.
FLM6472-25F - C-Band Internally Matched FET
(SUMITOMO)
FLM6472-25F
FEATURES
• • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dB.
FLM6472-4F - C-Band Internally Matched FET
(ETC)
FLM6472-4F
FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc.
FLM6472-4F - C-Band Internally Matched FET
(SUMITOMO)
FLM6472-4F
FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc.
FLM6472-6F - C-Band Internally Matched FET
(SUMITOMO)
FLM6472-6F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (.
FLM6472-8F - C-Band Internally Matched FET
(SUMITOMO)
FLM6472-8F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (.
FLM0910-12F - X-Band Internally Matched FET
(ETC)
FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa.
FLM0910-12F - X-Band Internally Matched FET
(SUMITOMO)
FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa.
FLM0910-15F - X-Band Internally Matched FET
(SUMITOMO)
FLM0910-15F
X-Band Internally Matched FET
FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.).