FLU35ZME1 Datasheet, Fet, SUMITOMO

FLU35ZME1 Features

• Fet High Output Power: P1dB=35.5dBm(typ.) High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZME1

PDF File Details

Part number:

FLU35ZME1

Manufacturer:

SUMITOMO

File Size:

472.88kb

Download:

📄 Datasheet

Description:

L-band medium & high power gaas fet. The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product serie

FLU35ZME1 Application

• Applications SUMITOMO’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (

TAGS

FLU35ZME1

SUMITOMO

📁 Related Datasheet

FLU35ZM - L-Band Medium & High Power GaAs FET (ETC)
FLU35ZM FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band .

FLU35XM - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •.

FLU011 - Supplementary Overcurrent Protection (Littelfuse)
Midget Fuses Supplementary Overcurrent Protection KLK Fuses FAST-ACTING s 600 VAC Fast-acting, high-interrupting capacity, current-limiting type fuse..

FLU10XM - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •.

FLU10XM - L-Band Medium & High Power GaAs FET (Fujitsu)
FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •.

FLU10ZME1 - L-Band Medium & High Power GaAs FET (SUMITOMO)
FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) P.

FLU17XM - L-Band Medium & High Power GaAs FET (Fujitsu)
FEATURES • High Output Power: P1dB=32.5dBm (Typ.) • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •.

FLU17ZME1 - L-Band Medium & High Power GaAs FET (SUMITOMO)
FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) P.

FL-10Z - EMC Filters (Premo)
.. .

FL-1X - EMC Filters (Premo)
.. .