FLU17ZME1 - L-Band Medium & High Power GaAs FET

Description

The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range.

This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.

Features

High Output Power: P1dB=32.5dBm(typ. ) High Gain: G1dB=12.5dB(typ. ) Low Cost Plastic(SMT) Package Tape and Reel Available.

SUMITOMO

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Datasheet Details

Part number	FLU17ZME1
Manufacturer	SUMITOMO
File Size	191.50 KB
Description	L-Band Medium & High Power GaAs FET
Datasheet	FLU17ZME1 Datasheet
Additional preview pages of the FLU17ZME1 datasheet.

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Full PDF Text Transcription

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FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm(typ.) High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Symbol VDS Rating 15 Gate-Soutce Voltage VGS -5 Total Power Dissipation PT 8.

Published: Nov 23, 2015 |