FLU10XM Datasheet | Fujitsu Semiconductor Limited

Features - High Output Power: P1dB=29.5dBm (Typ.) - High Gain: G1dB=14.5dB (Typ.) - High PAE: ηadd=47% (Typ.) - Hermetic Metal/Ceramic (SMT) Package - Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent...