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SPC4516B Datasheet - SYNC POWER

SPC4516B N & P Pair MOSFET

The SPC4516B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

SPC4516B Features

* N-Channel 30V/8.5A,RDS(ON)=17mΩ@VGS=10V 30V/7.8A,RDS(ON)=20mΩ@VGS=4.5V

* P-Channel -30V/-8.2A,RDS(ON)=24mΩ@VGS=-10V -30V/-7.26A,RDS(ON)=30mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

SPC4516B Datasheet (647.59 KB)