SPC4516B Datasheet (SYNC POWER)

SPC4516B, N & P Pair MOSFET

The SPC4516B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particula

SPC4516B Features

* N-Channel 30V/8.5A,RDS(ON)=17mΩ@VGS=10V 30V/7.8A,RDS(ON)=20mΩ@VGS=4.5V

* P-Channel -30V/-8.2A,RDS(ON)=24mΩ@VGS=-10V -30V/-7.26A,RDS(ON)=30mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP