SPN3055 Datasheet (SYNC POWER)

SPN3055, N-Channel MOSFET

The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application, such

SPN3055 Features

* 30V/12A,RDS(ON)=60mΩ@VGS=10V

* 30V/6A,RDS(ON)=90mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-252-2L package design PIN CONFIGURATION ( TO-252-2L ) PART MARKING 2020/04/28 Ver.6 Pag