SPN3402W - N-Channel MOSFET
The SPN3402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
SPN3402W Features
* 30V/2.8A,RDS(ON)=58mΩ@VGS=10V
* 30V/2.3A,RDS(ON)=65mΩ@VGS=4.5V
* 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION ( SOT-23 ) P
