SPN3406 - N-Channel MOSFET
The SPN3406 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
SPN3406 Features
* 30V/5.4A,RDS(ON)=40mΩ@VGS=10V
* 30V/4.6A,RDS(ON)=50mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/17 Ver.4 Pag
