SPN3632 Datasheet (SYNC POWER)

SPN3632, N-Channel MOSFET

The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN3632 Features

* 100V/80A,RDS(ON)=8.8mΩ@VGS=10V

* 100V/30A,RDS(ON)=13mΩ@VGS=6.0V

* 100V/10A,RDS(ON)=10mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L package design APPLICATIONS

* DC/DC Co