SPN4412B Datasheet (SYNC POWER)

SPN4412B, N-Channel MOSFET

The SPN4412B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , not

SPN4412B Features

* 30V/6.8A,RDS(ON)=35mΩ@VGS=10V

* 30V/5.6A,RDS(ON)=46mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design PIN CONFIGURATION(SOP

* 8) PART MARKING 2020/03/17 Ve