SPN4812 - N-Channel MOSFET
The SPN4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , note
SPN4812 Features
* 100V/12A,RDS(ON)=12mΩ@VGS=10V
* 100V/10A,RDS(ON)=15mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOP
* 8 package design PIN CONFIGURATION(SOP
* 8) 2020/03/27 Ver 2 PART MARK
