SPN4814A - N-Channel MOSFET
The SPN4814A is the N-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook com
SPN4814A Features
* 100V/20A,RDS(ON)=10.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOP
* 8 package design PIN CONFIGURATION(SOP
* 8) 2022/02/11 Ver 1 PART MARKING Page 1 SPN4814A N-Channel Enha