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SPN4900

N-Channel MOSFET

SPN4900 Features

* 60V/5.3A,RDS(ON)=118mΩ@VGS=10V

* 60V/4.7A,RDS(ON)=125mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design APPLICATIONS

* Power Management in Note book

* Port

SPN4900 General Description

The SPN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application ,.

SPN4900 Datasheet (509.58 KB)

Preview of SPN4900 PDF

Datasheet Details

Part number:

SPN4900

Manufacturer:

SYNC POWER

File Size:

509.58 KB

Description:

N-channel mosfet.

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TAGS

SPN4900 N-Channel MOSFET SYNC POWER

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