SPN4906 - N-Channel MOSFET
The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly
SPN4906 Features
* N-Channel 40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.5V 40V/4.5A,RDS(ON)=83mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOP
* 8 package design PIN CONFIGURATION(SOP
