SPN60N10 Datasheet (SYNC POWER)

SPN60N10, N-Channel MOSFET

The SPN60N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier app

SPN60N10 Features

* 100V/63A,RDS(ON)=20mΩ@VGS=10V

* 100V/63A,RDS(ON)=25mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-220