SPN60N10

N-Channel MOSFET

SYNC POWER

SPN60N10 Features

* 100V/63A,RDS(ON)=20mΩ@VGS=10V

* 100V/63A,RDS(ON)=25mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-220

SPN60N10 General Description

The SPN60N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier app.

SPN60N10 Datasheet (419.79 KB)

SPN60N10 Datasheet Preview — Preview of SPN60N10 PDF

Datasheet Details

Part number:

SPN60N10

Manufacturer:

SYNC POWER

File Size:

419.79 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SPN6001 N-Channel MOSFET (SYNC POWER)

SPN60600R8NETH Coating Inductors (DARFON)

SPN60600R9NETK Coating Inductors (DARFON)

SPN6060100METH Coating Inductors (DARFON)

SPN6060100METK Coating Inductors (DARFON)

SPN6060100METP Coating Inductors (DARFON)

SPN6060100MPTA Coating Inductors (DARFON)

SPN6060100MPTC Coating Inductors (DARFON)

SPN6060100MPTD Coating Inductors (DARFON)

SPN6060101METK Coating Inductors (DARFON)

TAGS

SPN60N10 N-Channel MOSFET SYNC POWER

Image Gallery

SPN60N10 Features

SPN60N10 General Description

Datasheet Details

File Size:

Description:

SPN60N10 Distributor