SPN8632 - N-Channel MOSFET
The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , note
SPN8632 Features
* 30V/96A,RDS(ON)=4.2mΩ@VGS=10V
* 30V/96A,RDS(ON)=6mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK3x3-8L package design APPLICATIONS
* MB/VGA/Vcore
* POL Applications
* SMPS 2
