SPP4435B Datasheet (SYNC POWER)

SPP4435B, P-Channel MOSFET

The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , not

SPP4435B Features

* -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP

* 8P package design PIN CONFIGURATION(SOP

* 8P) www.DataSheet4U.com PART MARKIN