SPP4435W Datasheet (SYNC POWER)

SPP4435W, P-Channel MOSFET

The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , not

SPP4435W Features

* -30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V

* -30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design PIN CONFIGURATION(SOP

* 8) PART MARKING 2020/03