SPP8803 Datasheet - SYNC POWER

SPP8803 P-Channel MOSFET

The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application ,.

SPP8803 Features

* -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP-8P package design APPLICATIONS z Power Management in Note

SPP8803 Datasheet (210.28 KB)