SPP8803B Datasheet (SYNC POWER)

SPP8803B, P-Channel MOSFET

The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application

SPP8803B Features

* -20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V

* -20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V

* -20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.8V

* Super high density cell design for extremely Low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSSOP-8 package design APPLICATIONS