* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. PIN 1 5 6 7 8 DFN 5x6 1 2 3 4 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C ID Drain Current-Continuous ad L
SP632S
SamHop Microelectronics
95.19 KB
N-channel logic level enhancement mode field effect transistor.
Green Product SP632S Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS .
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