* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous c TA=70°C
SP6722
SamHop Microelectronics
107.32 KB
N-channel enhancement mode field effect transistor.
SP6722Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 2.0 PRODUCT SUMMARY VDSS I.
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