* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DFN 2X5 D1/D2 G2 S2 S2 G1 S1S1 (Bottom view) G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Sourc
SP8255
SamHop Microelectronics
89.82 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8255
Ver 1.1
PRODUCT SUMMARY
VDSS 20V
ID R.
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