SamHop Microelectronics SP8256
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8256 |
|---|---|
| Datasheet | SP8256 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view)ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c ac Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 11 8.8 90 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case 75 5.5 °C/W °C/W Details are subject to change without notice. Jan,09,2014 1 SP8256 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage D...
