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SP8256 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view).

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Datasheet Details

Part number SP8256
Manufacturer SamHop Microelectronics
File Size 95.71 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8256 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP8256 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 8.5 @ VGS=4.5V 9.0 @ VGS=4.0V 20V 11A 9.5 @ VGS=3.7V 10.0 @ VGS=3.1V 11.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c ac Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 11 8.8 90 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.