SamHop Microelectronics SP8255
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8255 |
|---|---|
| Datasheet | SP8255 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DFN 2X5 D1/D2 G2 S2 S2 G1 S1S1 (Bottom view) G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TA=25°C TA=70°C IDM -Pulsed c PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient R JC Thermal Resistance, Junction-to-Case Limit 20 ±12 7 5.6 34 1.67 1.07 -55 to 150 75 5.5 Units V V A A A W W °C °C/W °C/W Details are subjec
