Datasheet4U Logo Datasheet4U.com

SP8255 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DFN 2X5 D1/D2 G2 S2 S2 G1 S1S1 (Bottom view) G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2.

📥 Download Datasheet

Datasheet Details

Part number SP8255
Manufacturer SamHop Microelectronics
File Size 89.82 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8255 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SP8200S Schottky Barrier Rectifiers Eris
SP820S 8.0AMP Schottky Barrier Rectifiers SeCoS
SP820S Schottky Barrier Rectifiers Eris
SP8220BHb Digital QAM & Terrestrial NIM SERIT
SP8221BHb Digital QAM & Terrestrial NIM SERIT

Other Datasheets by SamHop Microelectronics

Part Number Description
SP8256 Dual N-Channel Enhancement Mode Field Effect Transistor
SP823C N-Channel Logic Level Enhancement Mode Field Effect Transistor
SP8005 N-Channel Enhancement Mode Field Effect Transistor
SP8006 N-Channel Enhancement Mode Field Effect Transistor
SP8007 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8255 Ver 1.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 15.0 @ VGS=4.5V 16.0 @ VGS=4.0V 7A 16.5 @ VGS=3.7V 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.