* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM P
SP8256
SamHop Microelectronics
95.71 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
SP8256
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS.
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