* Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. ID 12A R DS(ON) (m ) Max 160 @ VGS=10V G D S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Ga
STD12L01
SamHop Microelectronics
87.64 KB
N-channel logic level enhancement mode field effect transistor.
Gre r Pro
STD12L01
Ver 1.3
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
10.
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