* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID
STD10L01 Datasheet (104.09 KB)
STD10L01
SamHop Microelectronics
104.09 KB
N-channel enhancement mode field effect transistor.
Gre Pro
STU/D10L01
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m.
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