STD10LN80K5 Datasheet - STMicroelectronics

STD10LN80K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

STD10LN80K5 Features

* Order code VDS RDS(on) max. ID STD10LN80K5 800 V 630 mΩ 8A

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching application

STD10LN80K5-STMicroelectronics.pdf