STD105N10F7AG Datasheet (STMicroelectronics)

STD105N10F7AG, N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STD105N10F7AG AM01475v1_Tab Table 1: Device

STD105N10F7AG Features

* Order code VDS RDS(on) max. ID PTOT STD105N10F7AG 100 V 8 mΩ 80 A 120 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ci