STD600S - N-Channel Enhancement Mode Field Effect Transistor
STD600S Features
* ( m W ) Max ID 16A RDS(ON) Super high dense cell design for low RDS(ON). 55 @ VGS = 10V 70 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter
