Datasheet4U Logo Datasheet4U.com

STK103 - N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D G S SOT-89 D G S.

📥 Download Datasheet

Datasheet preview – STK103

Datasheet Details

Part number STK103
Manufacturer SamHop Microelectronics
File Size 96.00 KB
Description N-Channel MOSFET
Datasheet download datasheet STK103 Datasheet
Additional preview pages of the STK103 datasheet.

📁 Similar Datasheet

  • STK1030 - AF Power Amplifier Output Stage (ETC)
  • STK1030 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1035 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1039 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1040 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1045 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1049 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1050 - (STKxxxx) Output Stage of AF Power Amp (ETC)
  • STK1050II - Thick Film Hybrid Integrated Circuit 50W min AF Power Amp Output Stage With Built-in Emitter Resistance (Sanyo Semicon Device)
  • STK1059 - (STKxxxx) Output Stage of AF Power Amp (ETC)
Other Datasheets by SamHop Microelectronics

Full PDF Text Transcription

Click to expand full text
Gre r Pro STK103 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2.0A R DS(ON) (m Ω) Max 210 @ VGS=10V 312 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 2.0 1.6 11 20 TA=25°C TA=70°C 1.25 0.
Published: |