Datasheet4U Logo Datasheet4U.com

STK600 - N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S.

📥 Download Datasheet

Datasheet preview – STK600

Datasheet Details

Part number STK600
Manufacturer SamHop Microelectronics
File Size 94.48 KB
Description N-Channel MOSFET
Datasheet download datasheet STK600 Datasheet
Additional preview pages of the STK600 datasheet.

📁 Similar Datasheet

  • STK6005 - converting PC / Mac video images for a TFT-LCD display monitor (ETC)
  • STK6006 - 8051 Embedded LCD Monitor Micro Controller (Syntek Semiconductor)
  • STK6011 - 8051 Embedded Microcontroller (Syntek Semiconductor)
  • STK6103 - DC 3-phase Brushless Motor Driver (Sanyo Semicon Device)
  • STK6105 - DC 3-phase Brushless Motor Driver (Sanyo Semicon Device)
  • STK611-721-E - 3-Phase Motor Drive Inverter Hybrid IC (ON Semiconductor)
  • STK6153 - STK6153 (ETC)
  • STK621-015 - IGBT 600V/10A High Speed (Sanyo)
  • STK621-017 - 3-phase inverter power hybrid IC (Sanyo)
  • STK621-018 - 3-phase inverter power hybrid IC (Sanyo)
Other Datasheets by SamHop Microelectronics

Full PDF Text Transcription

Click to expand full text
Gre r Pro STK600 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 0.8A R DS(ON) ( Ω) Max 0.9 @ VGS=10V 1.3 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TA=25°C TA=70°C 0.80 0.65 4.4 0.56 TA=25°C TA=70°C 1.25 0.
Published: |