SamHop Microelectronics STK900
N-Channel MOSFET
| Part No. | STK900 |
|---|---|
| Datasheet | STK900 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G SABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage d Drain Current-Continuous -Pulsed a c TA=25°C TA=70°C Limit 100 ±20 1 0.8 3.16 1.1 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation TA=25°C TA=70°C 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 100 °C/W Details are subject to change without notice. Jun,22,2011 1 STK900 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter d Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VDS=80V , VGS=0V 100 1 ±10 V uA uA VGS= ±20V , VDS=0V ON...
