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Gre r Pro
STK900
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
1A
R DS(ON) ( Ω) Max
1.9 @ VGS=10V 2.2 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
d
Drain Current-Continuous -Pulsed
a c
TA=25°C TA=70°C
Limit 100 ±20 1 0.8 3.16 1.1
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
TA=25°C TA=70°C
1.25 0.
STK900 Datasheet
