STM101N - N-Channel MOSFET
STM101N Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Typ 170 @ VGS=10V 260 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source V
