STM105N - N-Channel MOSFET
STM105N Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b ae Limit 100 ±20 TA=2
