SDM4435 Datasheet (SamHop) - P-Channel Enhancement Mode MOS FET

SDM4435, P-Channel Enhancement Mode MOS FET

S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.27 2004 ver1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -30V -8A 20 @ VGS = -10V 35 @ VGS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON).

R ugged and reliable.

S urface Mount P ackage.

DDDD 8 7 65 5 S O-8 1 1 234 S SS G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b Drain-S ource