* Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 12A R DS(ON) (m Ω) Max 75 @ VGS=10V 105 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source
STF620S
SamHop
200.99 KB
N-channel enhancement mode field effect transistor.
Green Product STF620S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATUR.
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