STF6N65K3-045Y Datasheet - STMicroelectronics

STF6N65K3-045Y N-channel Power MOSFET

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for .

STF6N65K3-045Y Features

* 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram AM15572v1 Order code VDS RDS(on) max STF6N65K3(045Y) 650 V 1.3 Ω ID 5.4 A PTOT 30 W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacita

STF6N65K3-045Y-STMicroelectronics.pdf