* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a e TA=25°C TA=7
STM4417
SamHop
1.40 MB
P-channel enhancement mode field effect transistor.
Green Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STM4417
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (.
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