* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Cu
STM6960
SamHop
133.16 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
STM6960
Ver 1.2
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
I.
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