* ( m Ω ) Max ID 6.5A RDS(ON) Super high dense cell design for low RDS(ON). 36 @ VGS = 10V 42 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage
STM6962
SamHop Microelectronics
138.36 KB
Dual n-channel mosfet.
Green Product
STM6962
Aug 29.2006
SamHop Microelectronics Corp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
F.
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