K4H1G0638B Datasheet - Samsung Electronics

K4H1G0638B DDR SDRAM stacked 1Gb B-die (x4/x8)

DDR SDRAM st.128Mb x 8 st.256Mb x 4 VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 .

www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review. Revision 1.0 (June, 2003) - Deleted "B3" speed. Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August. 2003 www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) Key Feat.

K4H1G0638B Features

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe DQS

* Four banks operation

* Differential clock inputs(CK and CK)

* DLL aligns DQ and DQS transition with CK transition

* MRS cycle with address key program

K4H1G0638B_SamsungElectronics.pdf