K4H1G0638B DDR SDRAM stacked 1Gb B-die (x4/x8)

Samsung Electronics

Description

www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev.1.1 August..
DDR SDRAM st.

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Datasheet Specifications

Part number: K4H1G0638B
Manufacturer: Samsung Electronics
File Size: 237.59 KB
Datasheet: K4H1G0638B_SamsungElectronics.pdf
Description: DDR SDRAM stacked 1Gb B-die (x4/x8)

Features

* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe DQS
* Four banks operation
* Differential clock inputs(CK and CK)
* DLL aligns DQ and DQS transition with CK transition
* MRS cycle with address key program

Applications

* Absolute Maximum Rating Parameter Voltage on any pin relative to VSS Voltage on VDD & VDDQ supply relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -55 ~ +150 1.5 50 Unit V V °C W mA Note : Permanent devi

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K4H1G0638B DDR SDRAM stacked 1Gb B-die Samsung Electronics

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