K4H1G0638B - DDR SDRAM stacked 1Gb B-die (x4/x8)

Samsung Electronics

K4H1G0638B Datasheet Preview — Preview of K4H1G0638B PDF

Datasheet Details

Part number	K4H1G0638B
Manufacturer	Samsung Electronics
File Size	237.59 KB
Description	DDR SDRAM stacked 1Gb B-die (x4/x8)
Datasheet	K4H1G0638B_SamsungElectronics.pdf

K4H1G0638B Product details

Description

DDR SDRAM st.128Mb x 8 st.256Mb x 4 VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC VSSQ DQS NC VREF VSS DM CK CK CKE0 CKE1 A1

Features

Double-data-rate architecture; two data transfers per clock cycle.
Bidirectional data strobe DQS.
Four banks operation.
Differential clock inputs(CK and CK).
DLL aligns DQ and DQS transition with CK transition.
MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

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Published: Jun 11, 2010 |