K4X51163PG-FGC6 Datasheet (Samsung Electronics)

K4X51163PG-FGC6, 32Mx16 Mobile DDR SDRAM

7 8.0 Functional Description8 9.0 Mode Register Definition 9 9.1 Mode Register Set(MRS) 9 9.2 Extended Mode Register Set(EMRS)11 9.3 Internal Temperature Compensated Self Refresh (TCSR) 12 9.4 Partial Array Self Refresh (PASR)12 10.0 Absolute maximum ratings 13 11.0 DC Operating Conditions 13 12.0 D

Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K4X51163PG - FGC6(7)(8) Document Title 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No.

0.0 1.0 History - First version for target specification.

- Only Fast slew rate as Specification value for tIS,tIH,tDS,tDH Draft Date Apr.

14, 2008 Apr.

30, 2008 Remark Target Preliminary Editor J.Y.Bae W.H.Cho www.Da