K4X51163PG-FGC6 Datasheet - Samsung Electronics

K4X51163PG-FGC6 32Mx16 Mobile DDR SDRAM

7 8.0 Functional Description8 9.0 Mode Register Definition 9 9.1 Mode Register Set(MRS) 9 9.2 Extended Mode Register Set(EMRS)11 9.3 Internal Temperature Compensated Self Refresh (TCSR) 12 9.4 Partial Array Self Refresh (PASR)12 10.0 Absolute maximum ratings 13 11.0 DC Operating Conditions 13 12.0 D.

Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K4X51163PG - FGC6(7)(8) Document Title 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No. 0.0 1.0 History - First version for target specification. - Only Fast slew rate as Specification value for tIS,tIH,tDS,tDH Draft Date Apr. 14, 2008 Apr. 30, 2008 Remark Target Preliminary Editor J.Y.Bae W.H.Cho www.Da.

K4X51163PG-FGC6_SamsungElectronics.pdf