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K4X51163PE-FG Datasheet - Samsung semiconductor

32Mx16 Mobile DDR SDRAM

K4X51163PE-FG Features

* VDD/VDDQ = 1.8V/1.8V

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* MRS cycle with address key programs - CAS Latency ( 3 ) - Burst

K4X51163PE-FG General Description

Symbol CK, CK Type Input Description Mobile DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activa.

K4X51163PE-FG Datasheet (576.04 KB)

Preview of K4X51163PE-FG PDF

Datasheet Details

Part number:

K4X51163PE-FG

Manufacturer:

Samsung semiconductor

File Size:

576.04 KB

Description:

32mx16 mobile ddr sdram.

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K4X51163PE-FG 32Mx16 Mobile DDR SDRAM Samsung semiconductor

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