K8A5615ETA Datasheet - Samsung Electronics

K8A5615ETA Flash Memory

of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Preliminary 0.3 August 3, 2004 Preliminary 0.4 August 23, 2004 Preliminary 0.5 September 6, 2004 P.

www.DataSheet4U.com K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz Revision - Change the device version ID Top boot device : 22ECH > 22FCH Bottom boot device : 22EDH > 22FDH - Not support accelerated quad word program operation Revision - Change the initial access time of asynchro.

K8A5615ETA Features

* Single Voltage, 1.7V to 1.95V for Read and Write operations

* Organization - 16,772,216 x 16 bit ( Word Mode Only)

* Read While Program/Erase Operation

* Multiple Bank Architecture - 16 Banks (16Mb Partition)

* OTP Block : Extra 256Byte block

* Read

K8A5615ETA Datasheet (743.68 KB)