Datasheet4U Logo Datasheet4U.com

K8A5615ETA - Flash Memory

This page provides the datasheet information for the K8A5615ETA, a member of the K8A5615EBA Flash Memory family.

Datasheet Summary

Description

of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Preliminary 0.3 August 3, 2004 Preliminary 0.4 August 23, 2004 Preliminary 0.5 September 6, 2004 P

Features

  • Single Voltage, 1.7V to 1.95V for Read and Write operations.
  • Organization - 16,772,216 x 16 bit ( Word Mode Only).
  • Read While Program/Erase Operation.
  • Multiple Bank Architecture - 16 Banks (16Mb Partition).
  • OTP Block : Extra 256Byte block.
  • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66.

📥 Download Datasheet

Datasheet preview – K8A5615ETA

Datasheet Details

Part number K8A5615ETA
Manufacturer Samsung Electronics
File Size 743.68 KB
Description Flash Memory
Datasheet download datasheet K8A5615ETA Datasheet
Additional preview pages of the K8A5615ETA datasheet.

📁 Similar Datasheet

  • K8A56EBC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A56ETC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A56EZC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A50D - Silicon N-Channel MOSFET (Toshiba)
  • K8A55DA - TK8A55DA (Toshiba)
  • K8A57EBC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A57ETC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A57EZC - 256Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1215EBC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1215ETC - 512Mb C-die NOR FLASH (Samsung semiconductor)
Other Datasheets by Samsung Electronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID Top boot device : 22ECH --> 22FCH Bottom boot device : 22EDH --> 22FDH - Not support accelerated quad word program operation Revision - Change the initial access time of asynchronous read mode K8A56156ET(B)A-DE7C tAA : 70ns--->80ns tCE : 70ns--->80ns - Support accelerated quad word program operation Revision - Add the operation flow chart Revision - Add the description of range limitation of data read out during program suspend.
Published: |