K8A55DA Datasheet - Toshiba

K8A55DA TK8A55DA

TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage DC (Note Drain current 1) ymbol VDSS VGSS ID IDP PD 2) EAS IAR EAR Tch Tstg Rating 550 ±30 7.5 30 40 163 7.5 4.0 150 55 to 150 A W mJ A mJ °C °C Unit V .

K8A55DA Features

* transportation, traffic signaling equipment, e

K8A55DA-Toshiba.pdf